Semiconductor chip mounting method

专利摘要:
The present invention discloses a method for mounting a semiconductor chip. The mounting method of the disclosed invention deposits a passivation film on a semiconductor wafer provided with a pad. The passivation film is then etched to expose the top of the pad, thereby opening the pad. Next, a photoresist film is applied onto the semiconductor wafer. The photoresist film is exposed and developed to open the pad portion. Subsequently, a conductive bump is formed on the opened pad, and an anisotropic conductive adhesive is applied on the bump. Thereafter, the photoresist film is removed. Subsequently, the semiconductor wafer is sawed into chips, and then the semiconductor chips are mounted on a printed circuit board.
公开号:KR19990056739A
申请号:KR1019970076750
申请日:1997-12-29
公开日:1999-07-15
发明作者:조일환
申请人:김영환；현대전자산업 주식회사；
IPC主号:

专利说明:

Semiconductor chip mounting method
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor chip mounting method, and more particularly, to a flip chip mounting method in which a chip is directly attached to a printed circuit board.
Flip chips applied in highly integrated semiconductor devices are a technique for directly attaching sawed semiconductor chips to a printed circuit board. This technique occupies a small area on the printed circuit board since no package structure and leads are provided.
FIG. 1 is a cross-sectional view of a conventional flip chip mounted on a printed circuit board. As shown in the drawing, the pad 2 of the sawed semiconductor chip 1 is subjected to a predetermined heat treatment with the pad 5 of the printed circuit board 4. It is attached by the solder bump 3 which flowed by, and is mounted. Here, reference numeral 3 denotes a passivation film covering the surface of the semiconductor chip 1.
However, when mounted using the solder bumps 3, an additional process for flowing the solder bumps 3 is added, and due to the thermal process for flowing, the device characteristics may be affected.
In addition, when the solder bumps 3 flow, there is a problem that the flow of the solder bumps 3 may flow on the printed circuit board.
Accordingly, an object of the present invention is to provide a semiconductor chip mounting method capable of mounting a semiconductor chip on a printed circuit board without a solder bump flow process.
1 is a cross-sectional view of a semiconductor chip mounted on a printed circuit board according to the related art.
2A to 2D are cross-sectional views of respective manufacturing processes for explaining a method of mounting a semiconductor chip according to the present invention.
(Explanation of symbols for the main parts of the drawing)
11: semiconductor wafer 12: pad
13 passivation film 14 photoresist film
15 conductive bump 16 anisotropic conductive adhesive
In order to achieve the above object of the present invention, according to one embodiment of the present invention, the semiconductor chip mounting method of the present invention, the passivation film is deposited on a semiconductor wafer provided with a pad. The passivation film is then etched to expose the top of the pad, thereby opening the pad. Next, a photoresist film is applied onto the semiconductor wafer. The photoresist film is exposed and developed to open the pad portion. Subsequently, a conductive bump is formed on the opened pad, and an anisotropic conductive adhesive is applied on the bump. Thereafter, the photoresist film is removed. Subsequently, the semiconductor wafer is sawed into chips, and then the semiconductor chips are mounted on a printed circuit board.
According to the present invention, by using the anisotropic conductive adhesive, the bump flow process is eliminated, and the process is simplified. In addition, the flowed solder bumps do not flow to the printed circuit board side, thereby not affecting device characteristics. In addition, since the bumps are formed throughout the wafer and then sawed in the form of a semiconductor chip, the process can be simplified.
Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.
2A to 2D are cross-sectional views of respective manufacturing processes for explaining a method of mounting a semiconductor device according to the present invention.
Referring to FIG. 2A, a passivation film 13 is formed on a semiconductor wafer 11 on which pads 12 are formed. The passivation film 13 is partially etched to open the pad 12. Then, a photoresist film 14 is applied over the semiconductor wafer 11.
Subsequently, as shown in FIG. 2B, the photoresist film 14 is exposed and developed so that the portion of the pad 12 can be exposed. Accordingly, the upper portion of the pad 13 is exposed. Thereafter, the conductive bumps 15 are formed in the space where the photoresist film 14 is partially removed by a known technique. At this time, the height of the conductive bumps 15 is formed to be lower than the height of the photoresist film 14. The bump 15 is formed of gold (Au), nickel (Ni), gold plated nickel, and lead / tin (Pb / Sn) materials, and is formed by electroplating. In addition, the width | variety of the bump 15 is about 50-200 micrometers, and height is 5-50 micrometers.
Then, as shown in FIG. 2C, an anisotropic conductive adhesive (16) is applied on the bumps 15. At this time, the height of the bump 15 and the conductive adhesive 16 is equal to the height of the photoresist film 14. Here, the anisotropic conductive adhesive 16 includes conductive particles in an adhesive resin material, and the particles are nickel (Ni) or gold (Au), and the size of the conductive particles is 1 to 20 μm. . The particles may also be used with gold or nickel plated plastic balls. In addition, the resin material constituting the anisotropic conductive adhesive 16 may be thermocompressed by epoxy, modified epoxy, polyester, modified polyester, polymer, acrylic ester, silicone resin, phenoxy resin, polyurethane, or heat or ultraviolet rays. A polymer to be cured is used.
Thereafter, as shown in FIG. 2D, the photoresist film 14 is removed in a known manner, and the semiconductor wafer 11 is sawed in the form of a semiconductor chip 11. Then, the semiconductor chip 11a is mounted on the printed circuit board 20 by thermocompression bonding. The thermocompression conditions are thermally bonded at a pressure of 0.5 to 150 kgF / ㎠ and a temperature of 80 to 200 ℃. In this case, the pad 12 of the semiconductor chip 11a and the pad 21 of the printed circuit board 20 are electrically connected by the conductive bumps 15 and the anisotropic conductive adhesive 16 to form the semiconductor chip 11a. The conductive bumps 15 formed on the pads 12 are bonded by the anisotropic conductive adhesive 16.
In this way, by using the anisotropic conductive adhesive 16 to electrically contact the pad 12 of the semiconductor chip 11a and the pad 21 on the printed circuit board 20, a separate bump flow process is eliminated.
As described in detail above, according to the present invention, by using an anisotropic conductive adhesive, the flow process of bumps is eliminated, and the process is simplified.
In addition, the flowed solder bumps do not flow to the printed circuit board side, thereby not affecting device characteristics.
In addition, since the bumps are formed throughout the wafer and then sawed in the form of a semiconductor chip, the process can be simplified.
In addition, this invention can be implemented in various changes within the range which does not deviate from the summary.

权利要求:
Claims (9)
[1" claim-type="Currently amended] Depositing a passivation film on a semiconductor wafer provided with a pad;
Etching the passivation layer to expose the upper portion of the pad, thereby opening the pad;
Applying a photoresist film on the semiconductor wafer;
Exposing and developing the photoresist film to open the pad portion;
Forming a conductive bump on the opened pad;
Applying an anisotropic conductive adhesive on the bumps;
Removing the photoresist film;
Sawing the semiconductor wafer in the form of a semiconductor chip; And
Mounting the semiconductor chip on a printed circuit board.
[2" claim-type="Currently amended] The method of claim 1, wherein the anisotropic conductive adhesive is a resin material containing conductive particles.
[3" claim-type="Currently amended] The method of claim 2, wherein the particles are nickel, gold, gold, or nickel plated plastic balls.
[4" claim-type="Currently amended] 4. The method of claim 3, wherein the resin material is epoxy, modified epoxy, polyester, modified polyester, polymer, acrylic ester, silicone resin, phenoxy resin, polyurethane, or polymers thermocompression cured by heat or ultraviolet light. The semiconductor chip mounting method characterized by the above-mentioned.
[5" claim-type="Currently amended] The method of claim 1, wherein the bump is made of gold, nickel, gold-plated nickel, or lead / tin material.
[6" claim-type="Currently amended] The method of claim 5, wherein the bump is formed by an electroplating method.
[7" claim-type="Currently amended] The method of claim 1, wherein the semiconductor chip is mounted on a printed circuit board by thermal bonding.
[8" claim-type="Currently amended] The method of claim 7, wherein the thermocompression is performed at a pressure of 0.5 to 150 kgF / cm 2 and a temperature of 80 to 200 ° C. 9.
[9" claim-type="Currently amended] The semiconductor chip mounting method according to claim 1, wherein the photoresist film is formed to a predetermined height of the conductive bumps and the anisotropic conductive adhesive.

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同族专利:

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引用文献:

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公开号 | 申请日 | 公开日 | 申请人 | 专利标题

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法律状态:
1997-12-29|Application filed by 김영환, 현대전자산업 주식회사

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1997-12-29|Priority to KR1019970076750A

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1999-07-15|Publication of KR19990056739A

优先权:

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申请号 | 申请日 | 专利标题

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KR1019970076750A|KR19990056739A|1997-12-29|1997-12-29|Semiconductor chip mounting method|